Silicon; metal; six phase; 1.3 volts; 3.3 ampere; minus 55 degrees c to plus 150 degrees c operating temp range; 0.995 in. Lg; 0.750 in. W; 0.448 in. H; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6240-01-340-6265
NSN 5998-01-604-8945
NSN 6685-00-812-7835
NSN 5950-00-961-6987
NSN 5855-01-586-4777
NSN 6110-01-462-1305
NSN 5975-00-054-9372
NSN 6135-01-294-1280
NSN 5965-01-330-4042
NSN 5905-00-507-3968
NSN 5905-00-717-1869
NSN 6130-01-400-6123