Six phase diode half wave rectifier assembly; 50 v peak inverse voltage; average rectified current 25 amp at 55 degrees c; 2.000 in. Lg; 1.250 in. W; 0.600 in. Max h; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 2925-01-554-1474
NSN 6145-01-365-7801
NSN 6145-01-509-4057
NSN 4140-01-563-5245
NSN 6135-01-390-7364
NSN 6105-01-614-1640
NSN 5905-00-191-1659
NSN 5935-00-082-1493
NSN 5990-01-627-8097
NSN 5930-01-333-9118
NSN 6135-01-495-0933
NSN 5960-00-586-5292