Six phase diode half wave rectifier assembly; 50 v peak inverse voltage; average rectified current 25 amp at 55 degrees c; 2.000 in. Lg; 1.250 in. W; 0.600 in. Max h; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5835-01-474-1224
NSN 5975-01-277-1327
NSN 5985-01-322-0989
NSN 6650-00-527-8822
NSN 6610-00-878-9442
NSN 6685-00-862-5431
NSN 5835-00-905-7165
NSN 2925-01-647-7225
NSN 5835-00-518-4507
NSN 5965-01-332-9825
NSN 6130-00-317-3054
NSN 5930-01-629-4793