Three phase bridge; common anode; silicon; m55 degrees c to p150 degrees c operating temp range; 200 vdc each diode; test data document: a81349-mil-s-19500/420
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5999-01-591-0171
NSN 6650-01-420-3155
NSN 5990-01-145-2878
NSN 6645-00-909-2143
NSN 5910-01-625-8216
NSN 6150-01-616-4310
NSN 6110-00-249-7914
NSN 6220-00-386-0997
NSN 5985-01-124-7299
NSN 6110-01-354-3558
NSN 6150-01-457-1473
NSN 5920-01-334-9848