Three phase bridge; common anode; silicon; m55 degrees c to p150 degrees c operating temp range; 200 vdc each diode; test data document: a81349-mil-s-19500/420
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6150-01-044-7832
NSN 6135-01-210-8715
NSN 5835-00-885-6030
NSN 6685-01-398-7371
NSN 5945-00-414-5175
NSN 5990-01-563-1554
NSN 6220-00-783-2050
NSN 6220-00-020-0215
NSN 5855-01-003-7102
NSN 5996-01-322-5587
NSN 5920-01-601-1728
NSN 2925-00-555-4578