Semiconductor device diode array working peak reverse voltage 75 v, dc forward current 400 ma, peak forward surge current 2.0a, power dissipataion per junction at 25 degrees c 500 mw
A grouping of two or more semiconducting devices such as light emitting diode; semiconductor device, diode; semiconductor device, photo; semiconductor device, thyristor; and/or transistor mounted on a common mounting or mounted on each other. The devices must be separable and each item must be capable of functioning in accordance with its given name. For assemblies consisting of semiconducting devices permanently cased, encapsulated, or potted together to form a single unit, see rectifier, semiconductor device, unitized and semiconductor devices, unitized. Excludes semiconductor device set; microcircuit assembly; and microcircuit set. See also absorber, overvoltage.
Classification: Semiconductor devices, nesoi
NSN 4140-01-468-5962
NSN 5999-01-323-1558
NSN 6320-00-394-8458
NSN 5996-00-159-8096
NSN 5915-00-081-3929
NSN 6145-00-551-5288
NSN 5975-01-004-5251
NSN 4140-00-024-0186
NSN 5945-00-289-9859
NSN 5960-01-271-0928
NSN 5965-00-587-1916
NSN 5920-01-225-5442