Semiconductor device diode array working peak reverse voltage 75 v, dc forward current 400 ma, peak forward surge current 2.0a, power dissipataion per junction at 25 degrees c 500 mw
A grouping of two or more semiconducting devices such as light emitting diode; semiconductor device, diode; semiconductor device, photo; semiconductor device, thyristor; and/or transistor mounted on a common mounting or mounted on each other. The devices must be separable and each item must be capable of functioning in accordance with its given name. For assemblies consisting of semiconducting devices permanently cased, encapsulated, or potted together to form a single unit, see rectifier, semiconductor device, unitized and semiconductor devices, unitized. Excludes semiconductor device set; microcircuit assembly; and microcircuit set. See also absorber, overvoltage.
Classification: Semiconductor devices, nesoi
NSN 6150-00-005-6550
NSN 4140-00-165-6535
NSN 6130-00-907-3505
NSN 5998-00-726-2074
NSN 6240-00-945-2723
NSN 4140-00-356-1639
NSN 5990-00-223-5938
NSN 2925-00-041-0439
NSN 5855-01-222-1242
NSN 5965-00-340-6790
NSN 6240-00-283-3553
NSN 5835-00-451-2982