Semiconductor device diode array working peak reverse voltage 75 v, dc forward current 400 ma, peak forward surge current 2.0a, power dissipataion per junction at 25 degrees c 500 mw
A grouping of two or more semiconducting devices such as light emitting diode; semiconductor device, diode; semiconductor device, photo; semiconductor device, thyristor; and/or transistor mounted on a common mounting or mounted on each other. The devices must be separable and each item must be capable of functioning in accordance with its given name. For assemblies consisting of semiconducting devices permanently cased, encapsulated, or potted together to form a single unit, see rectifier, semiconductor device, unitized and semiconductor devices, unitized. Excludes semiconductor device set; microcircuit assembly; and microcircuit set. See also absorber, overvoltage.
Classification: Semiconductor devices, nesoi
NSN 6105-01-146-8148
NSN 5990-01-517-1909
NSN 5996-00-183-9851
NSN 6150-00-727-5364
NSN 5915-01-649-5992
NSN 5999-00-122-1500
NSN 5950-01-083-7083
NSN 6620-01-520-3640
NSN 6610-01-144-4228
NSN 5950-01-642-5062
NSN 5930-01-225-8806
NSN 6105-01-301-7159