Silicon multi-cell rectifier, double cased, external molded case, internal metal case, hermetically sealed, copper plated base, base 3.000 in. Lg; 3.000 in. W; 0.260 in. H; molded body dim. 2.200 in. Dia; 0.740 in. H; four 0.281 in. Diameter mtg holes in base spaced on 2.510 in. Mtg centers, one lug terminal, m65.0 to p190.0 degrees c operating temp; storage temp range: minus 65.0 to 190.0 degrees celcius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6150-00-473-3761
NSN 5975-01-362-0425
NSN 6110-01-540-3799
NSN 6650-00-166-7160
NSN 5998-00-420-4275
NSN 5985-01-328-5866
NSN 5999-00-934-1271
NSN 5985-00-840-9954
NSN 6685-00-692-8343
NSN 5999-01-450-9336
NSN 5855-01-346-7682
NSN 6130-01-614-4683