Silicon multi-cell rectifier, double cased, external molded case, internal metal case, hermetically sealed, copper plated base, base 3.000 in. Lg; 3.000 in. W; 0.260 in. H; molded body dim. 2.200 in. Dia; 0.740 in. H; four 0.281 in. Diameter mtg holes in base spaced on 2.510 in. Mtg centers, one lug terminal, m65.0 to p190.0 degrees c operating temp; storage temp range: minus 65.0 to 190.0 degrees celcius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5965-01-207-0991
NSN 5990-01-281-0018
NSN 6645-00-544-8529
NSN 6645-01-116-3423
NSN 5996-01-112-7385
NSN 5960-01-599-4726
NSN 5998-01-459-1338
NSN 6685-00-248-6990
NSN 5960-01-442-7950
NSN 5855-01-421-7691
NSN 5910-01-099-4968
NSN 5985-00-055-1053