Matl: silicon; configuration: junction contact; junction configuration: pnpn; max. Working voltage: 400v; operating temp: -40c to +110c; rms forward on-state current: 4 amps max.; peak forward on-state repetitive current: 75 amps; peak on voltage: 2.2 volts max at 4 amps; inclosure matl: plastic; jedec case outline designation: to-202; mounting method: unthreaded hole; terminal type: 3 uninsulated wire lead; thyristor lengt (including mounting plate) : .835 in. Max; height: .190 in. Max; width: .400 in. Max; repair part for 6515-01-246-1938, suction apparatus, surgical, model 6003 by gomco
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Thyristors, diacs & triacs, other than photosensitive devices, nesoi
NSN 6150-01-440-9213
NSN 5998-01-553-6684
NSN 5945-00-229-3907
NSN 5950-00-719-7470
NSN 5925-01-025-0322
NSN 6135-01-556-7318
NSN 6150-00-006-4231
NSN 5935-01-123-8086
NSN 6110-00-350-5518
NSN 5855-00-361-0167
NSN 5925-00-943-4489
NSN 5935-00-205-9563