Matl: silicon; configuration: junction contact; junction configuration: pnpn; max. Working voltage: 400v; operating temp: -40c to +110c; rms forward on-state current: 4 amps max.; peak forward on-state repetitive current: 75 amps; peak on voltage: 2.2 volts max at 4 amps; inclosure matl: plastic; jedec case outline designation: to-202; mounting method: unthreaded hole; terminal type: 3 uninsulated wire lead; thyristor lengt (including mounting plate) : .835 in. Max; height: .190 in. Max; width: .400 in. Max; repair part for 6515-01-246-1938, suction apparatus, surgical, model 6003 by gomco
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Thyristors, diacs & triacs, other than photosensitive devices, nesoi
NSN 5905-01-055-2008
NSN 6110-01-633-9660
NSN 6610-01-452-2715
NSN 6105-01-159-0050
NSN 5895-00-447-0550
NSN 6650-01-277-1858
NSN 6650-00-219-6239
NSN 5985-01-556-3668
NSN 5930-00-249-4538
NSN 4140-01-462-5901
NSN 5905-00-006-2964
NSN 6220-01-201-1489