Matl: silicon; configuration: junction contact; junction configuration: pnpn; max. Working voltage: 400v; operating temp: -40c to +110c; rms forward on-state current: 4 amps max.; peak forward on-state repetitive current: 75 amps; peak on voltage: 2.2 volts max at 4 amps; inclosure matl: plastic; jedec case outline designation: to-202; mounting method: unthreaded hole; terminal type: 3 uninsulated wire lead; thyristor lengt (including mounting plate) : .835 in. Max; height: .190 in. Max; width: .400 in. Max; repair part for 6515-01-246-1938, suction apparatus, surgical, model 6003 by gomco
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Thyristors, diacs & triacs, other than photosensitive devices, nesoi
NSN 5998-00-831-3941
NSN 5935-01-467-3710
NSN 7035-01-297-7941
NSN 6685-01-439-0755
NSN 5996-01-400-3558
NSN 6135-00-347-0595
NSN 6620-00-905-6590
NSN 5945-01-425-8059
NSN 5965-01-543-2937
NSN 5960-01-547-6699
NSN 5999-01-210-9960
NSN 6130-00-335-6812