Matl: silicon; configuration: junction contact; junction configuration: pnpn; max. Working voltage: 400v; operating temp: -40c to +110c; rms forward on-state current: 4 amps max.; peak forward on-state repetitive current: 75 amps; peak on voltage: 2.2 volts max at 4 amps; inclosure matl: plastic; jedec case outline designation: to-202; mounting method: unthreaded hole; terminal type: 3 uninsulated wire lead; thyristor lengt (including mounting plate) : .835 in. Max; height: .190 in. Max; width: .400 in. Max; repair part for 6515-01-246-1938, suction apparatus, surgical, model 6003 by gomco
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Thyristors, diacs & triacs, other than photosensitive devices, nesoi
NSN 5835-00-949-3018
NSN 5855-00-532-0025
NSN 5920-00-081-9156
NSN 5975-01-368-4718
NSN 6610-01-141-7014
NSN 5975-00-989-0726
NSN 6150-00-334-9252
NSN 6685-01-475-0305
NSN 5855-01-429-8702
NSN 5960-01-322-1337
NSN 5960-00-930-4458
NSN 2925-01-633-4048