Silicon; 3-phase bridge rectifier; hermetically sealed; m55 to p150 degrees c operating temp; 1.000 in. Lg; 0.420 in. W; 0.180 in. H; 5 terminals; storage temp range: m62.0 to p150.0 degrees celcius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6110-00-980-5454
NSN 5925-01-503-1167
NSN 5835-01-286-6499
NSN 5996-01-289-0493
NSN 5905-00-104-5963
NSN 5975-01-417-6799
NSN 5910-01-423-8643
NSN 5999-00-150-8792
NSN 5835-01-009-2417
NSN 5985-01-170-6579
NSN 4140-00-547-8918
NSN 4140-01-443-4123