Efull wave bridge rectifier; silicon; 1.145 in. Max square; 0.193 in. diameter through center hole; 4 tinned plate terminals; corrosion resistant sealed case; m55 degrees to p150 degrees c operating junction temp
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5855-01-658-4510
NSN 5920-01-187-2267
NSN 5910-00-921-6460
NSN 7035-00-295-0451
NSN 7035-01-506-2143
NSN 5905-00-334-5161
NSN 5855-01-295-2313
NSN 5999-00-817-7864
NSN 6610-01-513-5169
NSN 5999-01-541-9265
NSN 5910-01-269-7833
NSN 6110-01-069-2485