Full-wave; three phase; 2.000 in. Lg o/a; 0.630 in w o/a; silicon semi-conductor matl; black dyed anodized aluminum case and finish; hermetically sealed enclosure; 75 grams max weight; m55 degrees p150 degrees c temp range; copper terminals
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5930-01-253-1537
NSN 4140-01-116-3138
NSN 5905-01-139-5053
NSN 5975-00-464-7535
NSN 5910-01-378-5834
NSN 6620-00-054-4778
NSN 2925-01-116-1683
NSN 5996-01-088-8715
NSN 5996-00-847-8342
NSN 6620-01-462-1625
NSN 5975-01-248-2083
NSN 6220-01-215-3575