Full-wave; three phase; 2.000 in. Lg o/a; 0.630 in w o/a; silicon semi-conductor matl; black dyed anodized aluminum case and finish; hermetically sealed enclosure; 75 grams max weight; m55 degrees p150 degrees c temp range; copper terminals
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5925-01-452-7070
NSN 5930-01-117-4270
NSN 6650-01-658-7032
NSN 6145-01-208-9892
NSN 5895-00-461-1618
NSN 6220-00-934-1509
NSN 5999-01-592-3349
NSN 5998-00-131-8389
NSN 5998-00-850-6147
NSN 5999-00-550-7096
NSN 5920-00-391-6252
NSN 5996-00-337-8711