Three phase bridge; common anode; silicon; m55 degrees c to p150 degrees c operating temp range; 200 vdc each diode; test data document: a81349-mil-s-19500/420
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5999-01-445-6659
NSN 6645-00-492-6119
NSN 5895-00-909-8019
NSN 5930-01-410-8296
NSN 5855-01-472-7331
NSN 6685-01-408-5553
NSN 5998-00-149-1603
NSN 6645-01-173-8850
NSN 5905-01-418-1017
NSN 5945-01-492-9907
NSN 5975-01-148-3516
NSN 5925-00-060-6732