Silicon diode bridge assembly; full wave; temp range m55 degrees c to 150 degrees c; 0.650 in. Lg; 0.450 in. W; 0.210 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6105-01-549-6966
NSN 6220-01-011-0865
NSN 5855-01-149-4110
NSN 5990-00-301-3386
NSN 5990-01-011-7447
NSN 4140-00-818-5734
NSN 5975-00-987-2639
NSN 5920-01-406-3462
NSN 6650-01-328-8363
NSN 5999-01-406-8723
NSN 5855-00-160-2286
NSN 5920-01-221-3513