Qsilicon; single phase full wave fast recovery bridge rectifier; 200v breakdown voltage; m55 degrees c to p150 degrees c operating temp range; 0.765 in. Square mtg flange; 4 terminals; storage temp range: m55.0 to p150.0 dec celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5998-01-064-0892
NSN 6130-00-615-9250
NSN 6150-01-421-2543
NSN 6240-00-512-3473
NSN
NSN 6320-01-242-8355
NSN 6650-01-138-1712
NSN 6610-01-360-3564
NSN 6685-01-449-7430
NSN 6240-01-273-4903
NSN 6145-01-387-5560
NSN 6610-01-194-1246