Qsilicon; single phase full wave fast recovery bridge rectifier; 200v breakdown voltage; m55 degrees c to p150 degrees c operating temp range; 0.765 in. Square mtg flange; 4 terminals; storage temp range: m55.0 to p150.0 dec celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5998-01-155-0892
NSN 5999-01-528-7216
NSN 5835-00-924-4268
NSN 4140-01-008-8181
NSN 5915-01-539-2716
NSN 5910-01-431-8169
NSN 5965-01-443-5490
NSN 5905-00-244-6205
NSN 5895-01-207-8285
NSN 6220-00-034-7280
NSN 5945-01-507-2514
NSN 5895-01-157-3077