Silicon bridge rectifier; piv 200 volts; rms 70 volts; mfv at 10a 1.1 volts; one cycle surge current 375 amps; 2.000 in. Lg; 1.000 in. W; 1.200 in. Hg; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6110-01-501-5764
NSN 5895-01-303-1038
NSN 6610-01-550-7116
NSN 7035-00-135-4758
NSN 5920-00-150-1148
NSN 5905-00-341-0509
NSN 5996-01-196-0017
NSN 6620-00-067-4946
NSN 6610-00-034-3709
NSN 6645-01-196-8616
NSN 6130-00-600-1971
NSN 6145-01-459-9997