2 amp non-controlled avalanche voltage, 400v peak inverse and dc blocking voltage, 280v working voltage, full wave epoxy bridge rectifier, m50 to p150 degrees c operating and storage temp range, case 0.600 in. Lg; 0.600 in. W; 0.200 in. H; four wire lead terminals 1.000 in. Min lg spaced on 0.425 in. By 0.425 in. Mtg centers
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5905-00-699-8278
NSN 6110-00-019-7576
NSN 5990-01-100-7231
NSN 6105-01-478-9956
NSN 5965-00-452-0967
NSN 5996-00-607-5605
NSN 5935-01-319-5665
NSN 6320-00-242-3300
NSN 6130-01-143-9319
NSN 5935-00-067-4192
NSN 4140-01-602-7656
NSN 6150-01-558-7815