2 amp non-controlled avalanche voltage, 400v peak inverse and dc blocking voltage, 280v working voltage, full wave epoxy bridge rectifier, m50 to p150 degrees c operating and storage temp range, case 0.600 in. Lg; 0.600 in. W; 0.200 in. H; four wire lead terminals 1.000 in. Min lg spaced on 0.425 in. By 0.425 in. Mtg centers
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5835-01-089-1076
NSN 6685-01-444-1496
NSN 5925-01-555-5318
NSN 5920-01-572-5689
NSN 6105-01-295-1773
NSN 5935-01-100-3661
NSN 5920-01-013-8594
NSN 7035-01-219-9476
NSN 6145-01-084-0109
NSN 5895-01-172-9655
NSN 6145-00-145-8573
NSN 6610-01-534-7683