2 amp non-controlled avalanche voltage, 400v peak inverse and dc blocking voltage, 280v working voltage, full wave epoxy bridge rectifier, m50 to p150 degrees c operating and storage temp range, case 0.600 in. Lg; 0.600 in. W; 0.200 in. H; four wire lead terminals 1.000 in. Min lg spaced on 0.425 in. By 0.425 in. Mtg centers
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5855-00-189-6066
NSN 5999-01-487-5049
NSN 6145-00-492-8903
NSN 5855-00-149-0766
NSN 5985-01-359-0761
NSN 5950-01-138-1954
NSN 6610-00-977-1498
NSN 6610-01-008-1653
NSN 6130-01-470-4756
NSN 5905-01-073-1228
NSN 5996-01-054-3226
NSN 5915-01-648-2126