2 amp non-controlled avalanche voltage, 400v peak inverse and dc blocking voltage, 280v working voltage, full wave epoxy bridge rectifier, m50 to p150 degrees c operating and storage temp range, case 0.600 in. Lg; 0.600 in. W; 0.200 in. H; four wire lead terminals 1.000 in. Min lg spaced on 0.425 in. By 0.425 in. Mtg centers
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6610-01-381-3181
NSN 5975-01-478-4721
NSN 6685-01-142-3201
NSN 5855-00-110-9341
NSN 5945-01-597-4878
NSN 6145-01-501-0996
NSN 5855-00-427-7848
NSN 5920-01-493-5109
NSN 6110-00-248-7475
NSN 2925-01-544-4880
NSN 5855-01-575-0061
NSN 2925-01-342-1712