Silicon; metal; six phase; 1.3 volts; 3.3 ampere; minus 55 degrees c to plus 150 degrees c operating temp range; 0.995 in. Lg; 0.750 in. W; 0.448 in. H; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6620-01-110-2754
NSN 5965-01-420-6613
NSN 5930-00-248-5723
NSN 5950-01-422-2408
NSN 6240-00-802-8811
NSN 5950-01-302-7012
NSN 4140-01-099-9675
NSN 5935-01-421-1802
NSN 5930-01-374-1747
NSN 5920-01-086-5635
NSN 5910-00-236-0893
NSN 5975-01-020-7131