Silicon; metal; six phase; 1.3 volts; 3.3 ampere; minus 55 degrees c to plus 150 degrees c operating temp range; 0.995 in. Lg; 0.750 in. W; 0.448 in. H; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5835-00-061-5717
NSN 6240-01-579-6694
NSN 6135-01-490-7704
NSN 6135-00-412-1687
NSN 6320-01-495-1244
NSN 4140-00-983-1597
NSN 6240-01-152-2662
NSN 5950-00-683-8304
NSN 6650-01-406-9852
NSN 5915-01-102-1601
NSN 5950-00-186-0682
NSN 5999-00-582-0354