Silicon; 4 mtg holes 0.200 in. Dia; 2 8-32 in. Thd studs; 3 kv; 5.2 amperes; 11.250 in. Lg; 2.250 in. W; 3.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6105-00-852-8197
NSN 6645-00-356-5705
NSN 5999-01-222-1728
NSN 6145-01-461-2750
NSN 5895-01-173-1476
NSN 5965-00-066-7229
NSN 5998-01-456-3744
NSN 5935-01-065-3743
NSN 6620-01-226-4065
NSN 5950-01-510-3242
NSN 6620-00-162-9877
NSN 5905-00-624-9770