Silicon; 4 mtg holes 0.200 in. Dia; 2 8-32 in. Thd studs; 3 kv; 5.2 amperes; 11.250 in. Lg; 2.250 in. W; 3.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5935-00-200-1017
NSN 5895-01-557-9061
NSN 5965-01-183-7722
NSN 6685-01-415-0972
NSN 5998-01-462-4594
NSN 5965-00-933-8971
NSN 5905-01-256-1352
NSN 7035-01-371-0091
NSN 5910-01-171-1499
NSN 4140-01-127-6112
NSN 5855-01-511-4046
NSN 5945-00-910-4717