Silicon; 4 mtg holes 0.200 in. Dia; 2 8-32 in. Thd studs; 3 kv; 5.2 amperes; 11.250 in. Lg; 2.250 in. W; 3.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5835-01-572-9308
NSN 6610-00-147-3187
NSN 5998-00-069-3753
NSN 6645-01-435-6373
NSN 5905-01-544-4242
NSN 6220-01-551-8277
NSN 5915-01-226-5880
NSN 5990-00-489-7834
NSN 6645-01-171-0187
NSN 5925-01-438-4532
NSN 5935-01-158-5585
NSN 5998-01-316-4985