Silicon; 4 mtg holes 0.200 in. Dia; 2 8-32 in. Thd studs; 3 kv; 5.2 amperes; 11.250 in. Lg; 2.250 in. W; 3.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6620-00-562-6337
NSN 7035-01-172-0250
NSN 4140-01-360-9873
NSN 5975-01-362-2838
NSN 5930-00-426-2280
NSN 6685-00-044-6743
NSN 6150-01-433-2692
NSN 5835-00-286-5432
NSN 5935-01-440-1128
NSN 6610-01-519-8953
NSN 6645-01-132-7806
NSN 6150-01-149-9695