Silicon; 4 mtg holes 0.200 in. Dia; 2 8-32 in. Thd studs; 3 kv; 5.2 amperes; 11.250 in. Lg; 2.250 in. W; 3.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6620-00-699-5537
NSN 7035-00-285-3393
NSN 5835-01-476-8210
NSN 6650-01-003-9355
NSN 5835-00-949-3018
NSN 5975-01-349-7525
NSN 6150-01-605-3373
NSN 6105-01-433-2899
NSN 5990-01-612-5323
NSN 5990-00-398-0507
NSN 5965-01-089-8579
NSN 6620-01-179-6010