Silicon; 200 volts; 150 ampere; metal and plastic encased; 3 turret-type terminals; 2.250 in. Lg; 0.344 in. W; 1.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5998-01-540-5946
NSN 5925-00-017-9718
NSN 6610-01-168-7943
NSN 5920-01-159-7949
NSN 5985-01-171-5001
NSN 5996-01-005-1440
NSN 5990-00-330-8922
NSN 6110-01-650-1837
NSN 5975-01-098-7094
NSN 5975-00-111-3208
NSN 6620-00-155-2608
NSN 5985-00-477-5553