Silicon; 200 volts; 150 ampere; metal and plastic encased; 3 turret-type terminals; 2.250 in. Lg; 0.344 in. W; 1.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6105-01-611-2387
NSN 6135-01-561-5945
NSN 5905-00-065-2536
NSN 5930-01-272-7156
NSN 5835-01-209-6410
NSN 5905-01-620-0653
NSN 5925-01-269-7181
NSN 2925-00-540-9918
NSN 6320-01-139-0533
NSN 5990-01-232-9008
NSN 5950-00-462-9866
NSN 6240-01-082-2902