Silicon; 200 volts; 150 ampere; metal and plastic encased; 3 turret-type terminals; 2.250 in. Lg; 0.344 in. W; 1.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5950-00-577-1493
NSN 5910-01-110-8550
NSN 5990-01-046-3450
NSN 5960-01-331-1076
NSN 6240-01-541-9715
NSN 5920-01-650-1820
NSN 5960-01-363-0215
NSN 6110-00-092-9334
NSN 6685-01-166-5302
NSN 5945-00-100-1261
NSN 5935-01-044-4888
NSN 5998-01-012-7123