Silicon; 200 volts; 150 ampere; metal and plastic encased; 3 turret-type terminals; 2.250 in. Lg; 0.344 in. W; 1.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5835-01-185-1102
NSN 5835-01-202-9673
NSN 5925-01-351-5541
NSN 5985-01-519-8900
NSN 6135-01-495-0933
NSN 7035-01-182-1086
NSN 6645-00-283-6794
NSN 6220-00-248-2547
NSN 6645-00-388-3463
NSN 5895-01-130-8092
NSN 6610-01-381-0652
NSN 6220-01-573-1094