Xsingle-phase full-wave bridge; four diodes interconnected in a molded plastic encapsulated case, hexagon shaped case, four lug terminals, two 0.140 in. Diameter unthreaded mtg holes counterbored 0.250 by 0.125 in.; mtg holes spaced 1.700 in. Min to 1.750 in. Max c to c; m65.0 to p150.0 degrees c operating temp; 10 amp dc output current at 55 degrees c; 100v peak reverse voltage per cell; 70v sine wave rms input voltage; storage temp range: minus 65.0 to 150.0 degrees celcius; unpackaged unit weight: 92.000 grams
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6645-00-623-5052
NSN 6685-01-442-9326
NSN 5935-01-365-2208
NSN 7035-01-579-3587
NSN 4140-00-198-4961
NSN 6650-01-234-7012
NSN 5999-00-477-4812
NSN 6220-01-117-0322
NSN 5910-01-198-3914
NSN 5965-00-220-6900
NSN 4140-00-132-5191
NSN 5990-01-432-4984