Xsingle-phase full-wave bridge; four diodes interconnected in a molded plastic encapsulated case, hexagon shaped case, four lug terminals, two 0.140 in. Diameter unthreaded mtg holes counterbored 0.250 by 0.125 in.; mtg holes spaced 1.700 in. Min to 1.750 in. Max c to c; m65.0 to p150.0 degrees c operating temp; 10 amp dc output current at 55 degrees c; 100v peak reverse voltage per cell; 70v sine wave rms input voltage; storage temp range: minus 65.0 to 150.0 degrees celcius; unpackaged unit weight: 92.000 grams
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6110-00-075-7880
NSN 6320-00-139-1090
NSN 6610-00-464-6924
NSN 5960-01-456-1735
NSN 5835-01-068-4214
NSN 6620-01-633-8443
NSN 5945-01-019-1910
NSN 5835-00-491-3834
NSN 5960-00-337-7628
NSN 5930-00-421-2695
NSN 6320-01-082-2970
NSN 6610-01-118-2694