Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5895-01-364-7900
NSN 5975-01-068-3225
NSN 6220-01-352-5425
NSN 6650-01-113-7563
NSN 7035-01-194-9482
NSN 5965-01-580-4774
NSN 6135-01-131-9352
NSN 5920-01-584-9617
NSN 5935-01-341-0804
NSN 5985-01-301-8480
NSN 2925-01-459-8093
NSN 5915-00-661-2223