Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6240-00-450-0675
NSN 5935-01-132-5670
NSN 5920-01-313-9341
NSN 6645-01-229-5379
NSN 6320-01-585-8468
NSN 5935-01-068-2053
NSN 6150-01-279-2061
NSN 6145-01-240-8993
NSN 5855-00-149-0766
NSN 4140-01-573-8264
NSN 5999-00-081-8621
NSN 6620-00-270-3275