Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5925-00-284-3726
NSN 5996-01-463-1685
NSN 5996-00-081-3175
NSN 6650-01-290-4001
NSN 5996-00-957-0534
NSN 6240-00-578-7422
NSN 6130-00-102-8714
NSN 5930-00-616-1861
NSN 6220-01-513-9279
NSN 5895-00-456-0830
NSN 5950-00-184-2015
NSN 6220-01-184-5668