Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5985-00-553-9735
NSN 5855-01-088-8700
NSN 5895-01-582-1402
NSN 7035-01-494-1161
NSN 5960-00-418-3588
NSN 6145-01-634-0388
NSN 7035-00-896-3213
NSN 6320-01-379-1182
NSN 6620-00-273-8735
NSN 6145-01-564-8078
NSN 6220-01-106-5433
NSN 5925-01-512-5240