Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6150-00-855-2481
NSN 5905-01-408-4526
NSN 6240-00-793-7969
NSN 6150-01-136-9309
NSN 5945-00-890-0787
NSN 6240-00-480-7896
NSN 5835-01-462-5983
NSN 6105-01-253-8072
NSN 6135-01-205-5965
NSN 6610-01-120-7670
NSN 6105-01-480-8567
NSN 6110-01-627-5991