Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5999-01-607-0486
NSN 5835-00-427-2772
NSN 6220-01-180-9617
NSN 5998-01-560-7898
NSN 6220-01-072-7575
NSN 5935-01-382-3357
NSN 6135-01-581-8163
NSN 6240-01-363-8258
NSN 5910-00-857-3097
NSN 6320-01-399-1633
NSN 2925-00-673-4564
NSN 6685-00-869-7935