Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 2925-01-408-9485
NSN 6105-01-643-6024
NSN 5985-00-221-5566
NSN 5945-01-326-6763
NSN 6145-00-269-4271
NSN 6220-01-527-9634
NSN 6135-00-027-3914
NSN 6240-01-236-4423
NSN 5855-01-053-0679
NSN 5985-00-932-2702
NSN 7035-01-157-0028
NSN 5990-00-683-1095