Silicon; 4 mtg holes 0.200 in. Dia; 2 8-32 in. Thd studs; 3 kv; 5.2 amperes; 11.250 in. Lg; 2.250 in. W; 3.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6240-01-231-9243
NSN 5910-00-080-1979
NSN 5895-01-200-0995
NSN 5998-00-501-9376
NSN 6620-01-277-3947
NSN 5999-00-069-8262
NSN 5835-01-378-6804
NSN 5835-01-528-7454
NSN 5965-01-341-8746
NSN 5945-00-576-0158
NSN 5905-00-930-0653
NSN 5835-01-592-2350