Xsilicon bridge; 1.125 in. Lg; 1.125 in. W; 1.00 in. Max h; four solder terminals; one 0.193 in. Diameter mounting hole centrally located; minus 55 degrees c to plus 150 degrees c operating temp range; storage temp range: minus 55.0 to 150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5855-00-688-9954
NSN 5985-01-535-6682
NSN 5996-01-432-1145
NSN 5905-01-337-7701
NSN 5960-00-584-4553
NSN 6620-01-550-8573
NSN 5990-01-423-8189
NSN 5930-00-555-1866
NSN 6150-01-384-3112
NSN 6320-01-365-2701
NSN 5935-01-377-4311
NSN 5855-01-602-9653