Xsilicon bridge; 1.125 in. Lg; 1.125 in. W; 1.00 in. Max h; four solder terminals; one 0.193 in. Diameter mounting hole centrally located; minus 55 degrees c to plus 150 degrees c operating temp range; storage temp range: minus 55.0 to 150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5990-01-541-5632
NSN 5915-01-649-5992
NSN 6650-01-361-9336
NSN 5960-00-079-3769
NSN 5960-01-142-8170
NSN 5996-01-592-3011
NSN 5975-01-366-1564
NSN 6685-01-605-5707
NSN 6685-00-853-8835
NSN 5915-01-022-5112
NSN 6150-01-113-7574
NSN 7035-00-465-3298