Xsilicon bridge; 1.125 in. Lg; 1.125 in. W; 1.00 in. Max h; four solder terminals; one 0.193 in. Diameter mounting hole centrally located; minus 55 degrees c to plus 150 degrees c operating temp range; storage temp range: minus 55.0 to 150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5895-00-237-8977
NSN 5950-00-351-9481
NSN 5945-01-077-8685
NSN 6610-01-176-9314
NSN 5960-00-215-3754
NSN 5895-00-232-5355
NSN 5960-00-553-7338
NSN 5855-01-498-4949
NSN 6645-01-463-3441
NSN 7035-00-703-3535
NSN 4140-01-345-7808
NSN 6645-00-337-3638