Xsilicon bridge; 1.125 in. Lg; 1.125 in. W; 1.00 in. Max h; four solder terminals; one 0.193 in. Diameter mounting hole centrally located; minus 55 degrees c to plus 150 degrees c operating temp range; storage temp range: minus 55.0 to 150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 2925-01-470-5534
NSN 6620-01-633-8443
NSN 5920-01-482-2424
NSN 6135-01-344-0912
NSN 6650-01-406-3086
NSN 5925-00-647-3469
NSN 6105-01-547-1788
NSN 5950-01-158-6076
NSN 5985-01-537-3244
NSN 5905-01-445-3420
NSN 6130-00-163-1905
NSN 5920-01-083-2238