Xsilicon bridge; 1.125 in. Lg; 1.125 in. W; 1.00 in. Max h; four solder terminals; one 0.193 in. Diameter mounting hole centrally located; minus 55 degrees c to plus 150 degrees c operating temp range; storage temp range: minus 55.0 to 150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5999-01-479-3324
NSN 5945-01-585-6485
NSN 6145-01-583-6094
NSN 5910-01-260-5039
NSN 4140-00-696-4556
NSN 6685-01-424-5867
NSN 6645-01-195-6207
NSN 6320-01-082-2970
NSN 5990-01-243-4233
NSN 5960-01-005-9530
NSN 6240-00-364-0850
NSN 5985-01-506-6587