Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6685-00-673-3909
NSN 4140-01-489-6004
NSN 4140-01-562-7868
NSN 5935-01-446-5817
NSN 2925-00-001-4604
NSN 6645-00-235-4685
NSN 5960-01-154-3719
NSN 6150-01-085-5858
NSN 6645-00-527-6531
NSN 5925-01-440-9364
NSN 6110-01-410-8934
NSN 5905-00-089-8881