Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6145-00-170-6872
NSN 6150-01-384-8838
NSN 6105-00-102-4738
NSN 5960-01-120-2170
NSN 6145-01-444-0232
NSN 6645-00-248-5434
NSN 5999-01-288-0297
NSN 6320-00-593-0379
NSN 6610-00-967-6698
NSN 6145-01-622-1957
NSN 5910-01-514-2093
NSN 6645-01-538-0425