Silicon; 100 volts; 150 ampere; m55 degrees c to p150 degrees c operating junction temp range; solderable terminals; 2.250 in. Lg; 1.000 in. H; 0.346 in. W; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6130-00-375-6299
NSN 5915-01-351-5656
NSN 6645-01-170-0341
NSN 7035-01-188-5587
NSN 5930-01-624-2003
NSN 6145-00-928-6084
NSN 5975-01-488-8971
NSN 6650-01-283-3771
NSN 6110-01-308-7092
NSN 5925-00-315-2238
NSN 6150-01-394-5208
NSN 5990-01-338-2103