Silicon; 100 volts; 150 ampere; m55 degrees c to p150 degrees c operating junction temp range; solderable terminals; 2.250 in. Lg; 1.000 in. H; 0.346 in. W; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5960-00-195-6435
NSN 5925-01-647-8595
NSN 5945-01-273-9790
NSN 5990-01-510-4699
NSN 5920-01-141-6885
NSN 6135-01-500-0572
NSN 6620-01-349-4469
NSN 6620-01-593-0817
NSN 6645-00-258-8547
NSN 7035-00-585-2113
NSN 5998-01-538-8388
NSN 5905-01-094-6361