Silicon; 100 volts; 150 ampere; m55 degrees c to p150 degrees c operating junction temp range; solderable terminals; 2.250 in. Lg; 1.000 in. H; 0.346 in. W; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5835-01-486-4191
NSN 5930-00-952-2639
NSN 5975-01-220-6297
NSN 5855-01-173-0808
NSN 6130-01-586-0975
NSN 5996-01-224-5515
NSN 5920-00-231-8950
NSN 6130-00-028-6922
NSN 5855-01-040-3881
NSN 5920-00-448-9917
NSN 5990-01-287-1682
NSN 5990-01-419-0661