Silicon; 100 volts; 150 ampere; m55 degrees c to p150 degrees c operating junction temp range; solderable terminals; 2.250 in. Lg; 1.000 in. H; 0.346 in. W; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6150-00-008-1877
NSN 5985-01-444-4392
NSN 6135-00-816-9052
NSN 5999-00-156-4424
NSN 5985-01-442-5635
NSN 5905-00-074-0567
NSN 5920-00-617-9694
NSN 6320-01-643-0850
NSN 6320-00-295-2854
NSN 6110-01-538-5234
NSN 6320-00-788-5297
NSN 5965-00-215-5866