Silicon; 100 volts; 150 ampere; m55 degrees c to p150 degrees c operating junction temp range; solderable terminals; 2.250 in. Lg; 1.000 in. H; 0.346 in. W; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6130-01-181-8221
NSN 5835-01-045-3371
NSN 5835-01-118-4690
NSN 5975-01-628-6524
NSN 5990-01-215-0590
NSN 5960-01-304-3073
NSN 6650-00-816-6525
NSN 5985-01-492-5943
NSN 5965-01-436-0390
NSN 6240-00-369-9768
NSN 5945-01-576-4227
NSN 5998-01-039-8931