Silicon; 100 volts; 150 ampere; m55 degrees c to p150 degrees c operating junction temp range; solderable terminals; 2.250 in. Lg; 1.000 in. H; 0.346 in. W; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6135-01-507-4346
NSN 5999-01-552-3274
NSN 7035-01-341-6656
NSN 6110-01-398-0212
NSN 2925-01-038-7625
NSN 5910-01-603-7598
NSN 5935-01-047-4032
NSN 5905-00-260-5008
NSN 6105-01-199-4265
NSN 5910-00-518-1009
NSN 6150-01-213-0853
NSN 6130-01-148-2946