Silicon; 200 volts; 150 ampere; metal and plastic encased; 3 turret-type terminals; 2.250 in. Lg; 0.344 in. W; 1.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6145-01-012-0804
NSN 6240-01-415-5149
NSN 5935-00-911-8511
NSN 5998-01-586-9983
NSN 6145-01-255-6631
NSN 6150-01-424-0996
NSN 6220-01-614-9821
NSN 5998-00-991-4495
NSN 6135-00-754-8191
NSN 5925-00-774-6528
NSN 6135-01-260-7180
NSN 5945-01-600-5763