Silicon; 100 volts; 150 ampere; m55 degrees c to p150 degrees c operating junction temp range; solderable terminals; 2.250 in. Lg; 1.000 in. H; 0.346 in. W; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5930-00-353-4235
NSN 5999-01-523-8120
NSN 5965-00-412-4402
NSN 4140-01-400-3610
NSN 5945-01-389-1046
NSN 6150-00-445-2382
NSN 5965-01-258-5662
NSN 5965-01-176-3227
NSN 5999-00-709-7942
NSN 6620-01-029-5572
NSN 4140-01-190-1023
NSN 6610-01-570-7550