Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5998-01-121-2388
NSN 5910-01-487-4365
NSN 6110-00-334-0230
NSN 6650-00-052-3202
NSN 5930-01-548-8293
NSN 5996-01-357-0448
NSN 5975-01-481-9728
NSN 5975-01-452-4455
NSN 5998-00-683-1333
NSN 5975-00-442-3048
NSN 5920-00-274-6929
NSN 5930-00-130-2587