Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5835-01-422-2399
NSN 6620-00-234-8918
NSN 5950-01-527-4948
NSN 6685-00-899-0791
NSN 5920-00-864-2984
NSN 5975-01-268-6006
NSN 6320-01-522-0318
NSN 5905-00-035-8981
NSN 6685-01-656-8546
NSN 6650-01-538-6276
NSN 5855-01-546-9423
NSN 5910-01-219-4161